threshold gate

英 [ˈθreʃhəʊld ɡeɪt] 美 [ˈθreʃhoʊld ɡeɪt]

门限电路

计算机



双语例句

  1. And every little chamber was one reed long, and one reed broad; and between the little chambers were five cubits; and the threshold of the gate by the porch of the gate within was one reed.
    又有卫房,每房长一竿,宽一竿,相隔五肘。门槛,就是挨着向殿的廊门槛,宽一竿。
  2. Threshold Logic Gate ( TLG) is receiving much attention because of its logic versatility and functionally complete.
    阈值逻辑门由于具有强大的逻辑功能且独自构成完备集而备受关注。
  3. And the threshold of the gate next to the portico facing the temple was one rod deep.
    门槛,就是挨着向殿的廊门槛,宽一竿。
  4. Crossing the high iron-bound threshold, they noticed a thin dark face beside the stone lion to the right of the gate.
    他们跨出了铁皮包的门槛,在右面那个石狮子的旁边,看见了一张黑瘦的脸。
  5. Xiangzi barely had the strength to step across the threshold of the gate.
    祥子几乎没有力量迈出大门坎去。
  6. In addition, the threshold voltage is capable of being finely tuned with a proper gate bias.
    除此之外,由于强烈的闸极耦合效应,在分离的上闸极加上适当的偏压,便可精确地调控临限电压。
  7. We studied the threshold gate networks, then present an algorithm for the synthesis of two-level in classical two-level minimization of logic functions.
    我们在对阈门网络进行研究的基础上,给出了二级逻辑电路最小化技术应用的一个二级阈门网络综合算法-TLLS。
  8. The Logic Circuit Design of Deka-Value Threshold Gate and T-Gate
    十值阈门和T门电路的研究
  9. A simple structure of Deka-Value threshold gate is proposed. Based on the principle of Deka-Value threshold gate and the multi-element logic ( DYL, in Chinese) circuit proposed by Chinese researchers, a multi-functional and universal purpose Deka-Value T-Gate circuit is designed.
    介绍了一种结构简单的十值阈门,并采用该十值阈门和我国提出的多元逻辑(DYL)电路,设计了一个多功能通用十值T门电路。
  10. Heaviside function was proposed to create a precise arithmetic model of the threshold gate. The model can describe both the set and reset behavior of the threshold gate.
    提出采用Heaviside函数建立可精确描述门限门行为的数学模型,该数学模型可描述门限门的置位、复位行为。
  11. The threshold voltage of a-Si ∶ H/ SiN_x ∶ H TFT will shift under long time gate bias stress, it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor.
    a-Si∶H/sinx∶HTFT在长时间栅偏应力作用下,会产生阈值电压漂移,这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。
  12. Expressions of threshold voltage of short channel silicon gate MOS-FET and the temperature dependence of threshold voltage were derived from Yaus model.
    本文从yau的模型出发,推导出了短沟道硅栅MOSFET的阈电压表达式及阈电压与温度的关系:并考虑短沟道MOSFET的扩散电流。
  13. The influence of total dose, irradiation dose rate and gate biased voltage on the stability of radiation dose recording threshold voltage of PMOS dosimeters have been studied at room temperature. The threshold voltage drift trends and amplitude have been observed at different biased condition on gate source.
    在室温条件下,研究了辐照偏置、总剂量和剂量率对PMOS剂量计辐照剂量记录-阈电压的稳定性影响,观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。
  14. Study of Based on the Threshold Gate Network for Logic Synthesis
    基于阈门网络的逻辑综合问题研究
  15. The influence on threshold voltage and gate capacitance of MOSFETs due to quantum effects
    量子效应对MOSFETs阈值电压和栅电容的影响
  16. Realization of Boolean function base on threshold logic gate is always studied by researchers because its strong function and special advantage.
    阈值逻辑门具有很强的逻辑功能及独特的优点,用阈值逻辑门实现数字逻辑函数也一直受到关注。
  17. The mechanisms for a-Si ∶ H-TFT threshold voltage shift were analyzed. That is, the influence of charges injecting into SiN_x ∶ H gate insulator and the creation of meta-stable states in a-Si ∶ H to a-Si ∶ H-TFT threshold voltage shift under gate bias stress were analyzed.
    分析了a-Si∶H-TFT阈值电压漂移的机理,即分析了栅偏应力下电荷注入到sinx∶H栅绝缘层和a-Si∶H中亚稳态的产生对TFT阈值电压漂移的影响。
  18. The laser active recognition technique used to detect the target are presented, which include threshold value treatment technique, wave gate control technique and target extraction technique.
    阐述了激光主动探测目标识别可采用的技术,包括阈值处理技术、波门控制技术和目标提取技术等。
  19. Through the study on the structure and characteristic of grooved gate MOSFET, it is found that the concave corner greatly influence the threshold voltage and characteristics of the grooved gate MOSFET.
    通过对凹槽栅MOSFET结构、特性的研究,发现凹槽拐角对凹槽栅MOSFET的阈值电压及特性有着显著的影响。
  20. This change leads to such a great distance-measuring error that the threshold gate method may be in complete failure.
    这种距离误差有时会很大,可能导致阈值门法的失效。
  21. The threshold gate method has the problems of false alarm and missing alarm.
    阈值门法存在着虚警和漏警的问题。
  22. By solving the Poisson equation of the depletion region of high k gate dielectric and gate insulator region, the threshold voltage model of stack high k gate dielectric is got.
    同时,通过求解高k栅介质耗尽区与栅绝缘层区域的泊松方程,得到叠层高k栅介质阈值电压模型。
  23. With the established threshold voltage model, the effects of changes in key device parameters ( such as gate oxide thickness, strained-silicon thickness, composition of Ge, etc.) on device performance are also simulated.
    利用建立的阈值电压模型,本文还模拟了器件关键参数(如栅氧化层厚度、应变硅厚度、Ge组分等)对器件性能的影响。

英英释义

noun

  1. a logic element that performs a threshold operation

      Synonym:    threshold element